FQA11N90
FQA11N90 Datasheet
FQA11N90 / FQA11N90_F109 N-Channel MOSFET
| Part | Datasheet |
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FQA11N90 |
FQA11N90 (pdf) |
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| FQA11N90 / FQA11N90_F109 N-Channel MOSFET FQA11N90 / FQA11N90_F109 N-Channel MOSFET 900 V, A, 960 April 2013 • A, 900 V, RDS on = 960 Max. VGS = 10 V, ID = A • Low Gate Charge Typ. 72 nC • Low Crss Typ. 30 pF • 100% Avalanche Tested • RoHS Compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. TO-3P Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junction-to-Ambient, Max. 2007 Fairchild Semiconductor Corporation FQA11N90 900 ± 30 1000 30 300 -55 to +150 300 FQA11N90 Unit V A V mJ A mJ V/ns W/°C °C °C Unit °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FQA11N90 Device FQA11N90 FQA11N90_F109 Package TO-3P TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 50 V, ID = A Note 4 Ciss Input Capacitance Coss Output Capacitance |
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