FPN560 / FPN560A
Part | Datasheet |
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FPN560A (pdf) |
Related Parts | Information |
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FPN560 |
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FPN560A_D26Z |
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FPN560A_D27Z |
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FPN560A_D75Z |
PDF Datasheet Preview |
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FPN560 / FPN560A FPN560 FPN560A TO-226 NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to A continuous. Sourced from Process NA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 60 80 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FPN560 / FPN560A 50 125 Units V A °C Units W °C/W °C/W 1999 Fairchild Semiconductor Corporation FPN560 / FPN560A NPN Low Saturation Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current |
More datasheets: 5ZH104ZACJA | 5ZH104ZACAH | 5ZH104ZOCAM | 5ZH104MACJI | 5WH103ZACJH | 5WH103MACJI | 5YH103ZAAJA | 5YH473ZOEAM | 5YH103ZAAJI | 1297 |
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