FPN530
FPN530 Datasheet
FPN530 / FPN530A
| Part | Datasheet |
|---|---|
FPN530 |
FPN530 (pdf) |
| Related Parts | Information |
|---|---|
FPN530A |
FPN530A |
| PDF Datasheet Preview |
|---|
| FPN530 / FPN530A FPN530 FPN530A TO-226 NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 60 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FPN530 / FPN530A 50 125 Units V A °C Units W °C/W °C/W 1999 Fairchild Semiconductor Corporation FPN530 / FPN530A NPN Low Saturation Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current |
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