FPN430A

FPN430A Datasheet

FPN430 / FPN430A

Part	Datasheet
FPN430A	FPN430A (pdf)

Related Parts	Information
FPN430	FPN430

PDF Datasheet Preview
FPN430 / FPN430A FPN430 FPN430A TO-226 PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to A continuous. Sourced from Process PB. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 35 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 All voltages V and currents A are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FPN430 / FPN430A 50 125 Units V A °C Units W °C/W °C/W 1999 Fairchild Semiconductor Corporation FPN430 / FPN430A PNP Low Saturation Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current

PDF Datasheet Preview

FPN430 / FPN430A

FPN430 FPN430A

TO-226

PNP Low Saturation Transistor

These devices are designed for high current gain and low saturation voltage with collector currents up to A continuous. Sourced from Process PB.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VCBO VEBO IC TJ, Tstg

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
30 35 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 All voltages V and currents A are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

FPN430 / FPN430A 50 125

Units

V A °C

Units

W °C/W °C/W
1999 Fairchild Semiconductor Corporation

FPN430 / FPN430A

PNP Low Saturation Transistor
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO BVCBO

Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

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Datasheet ID: FPN430A 514983