FMBSA56
FMBSA56 Datasheet
FMBSA56
| Part | Datasheet |
|---|---|
FMBSA56 |
FMBSA56 (pdf) |
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| FMBSA56 FMBSA56 PNP General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process NC C1 E B C pin #1 C SuperSOTTM-6 single Mark .2G1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -80 -80 -500 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Sustaining Voltage * V BR CBO Collector-Base Breakdown Voltage V BR EBO Emitter-Base Breakdown Voltage ICEO Collector Cut-off Current ICBO Collector Cut-off Current On Characteristics IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCE = -60V, IB = 0 VCB = -80V, IE = 0 |
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