FMBS5551

FMBS5551 Datasheet

FMBS5551

Part	Datasheet
FMBS5551	FMBS5551 (pdf)

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FMBS5551 FMBS5551 NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. C pin #1 C SuperSOTTM-6 single Mark .3S1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 160 180 600 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V BR CEO V BR CBO V BR EBO ICBO Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cut-off Current On Characteristics IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C VEB = 4.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA

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FMBS5551

FMBS5551

NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

C pin #1 C

SuperSOTTM-6 single Mark .3S1

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 160 180 600 - 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Min. Max. Units

Off Characteristics

V BR CEO V BR CBO V BR EBO ICBO

Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

IEBO

Emitter Cut-off Current

On Characteristics

IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C VEB = 4.0V, IC = 0

DC Current Gain

VCE sat

Collector-Emitter Saturation Voltage

VBE sat

Base-Emitter Saturation Voltage

Small Signal Characteristics

IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V

IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA

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Datasheet ID: FMBS5551 514889