FMBS5401

FMBS5401 Datasheet

FMBS5401

Part	Datasheet
FMBS5401	FMBS5401 (pdf)

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FMBS5401 FMBS5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C pin #1 C SuperSOTTM-6 single Mark .4S1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -150 -160 -600 -55 ~ 150 Notes These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cutoff Current On Characteristics * IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB= -3.0V, IC=0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characterics IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Current Gain Bandwidth Product IC = -10mA, VCE = -10V, f = 100MHz

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FMBS5401

FMBS5401

PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for applications requiring high voltage.

C pin #1 C

SuperSOTTM-6 single Mark .4S1

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value -150 -160 -600 -55 ~ 150

Notes These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BVCEO BVCBO BVEBO ICBO

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

IEBO

Emitter Cutoff Current

On Characteristics *

IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB= -3.0V, IC=0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characterics

IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V

IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA

IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA

Current Gain Bandwidth Product

IC = -10mA, VCE = -10V,
f = 100MHz

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Datasheet ID: FMBS5401 514886