FMB857B

FMB857B Datasheet

FMB857B PNP Epitaxial Silicon Transistor

Part	Datasheet
FMB857B	FMB857B (pdf)

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FMB857B PNP Epitaxial Silicon Transistor FMB857B PNP Epitaxial Silicon Transistor • This device is designed for general purpose amplifier application at collector currents to 300mA. • Sourced from process C2 E1 C1 September 2007 pin #1 SSOT-6 Mark .N2 Dot denotes pin #1 Absolute Maximum Ratings TC=25°C unless otherwise noted VCBO VCEO VEBO IC TJ, TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. All voltages V and currents A are negative polarity for PNP transistors. Value 50 45 5 500 -55 ~ 150 Units V mA °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB X Max. 700 180 Units mW/°C °C/W Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO BVCEX ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Voltage Collector Cut-off Current IC = 10uA IC = 1mA IE = 10uA IC = 10uA, VBE = 1V VCB = 30V, T = 25°C T =150°C hFE VCE sat VBE on DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5V, IC = 2mA IC = 10 mA, IB = mA IC = 100 mA, IB = 5 mA

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FMB857B PNP Epitaxial Silicon Transistor

FMB857B PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process

C2 E1 C1

September 2007
pin #1

SSOT-6 Mark .N2 Dot denotes pin #1

Absolute Maximum Ratings TC=25°C unless otherwise noted

VCBO VCEO VEBO IC TJ, TSTG

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. All voltages V and currents A are negative polarity for PNP transistors.

Value
50 45 5 500 -55 ~ 150

Units

V mA °C

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

Max.
700 180

Units
mW/°C °C/W

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO BVCEX

ICBO

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Voltage

Collector Cut-off Current

IC = 10uA

IC = 1mA IE = 10uA IC = 10uA, VBE = 1V VCB = 30V, T = 25°C

T =150°C
hFE VCE sat VBE on

DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage

VCE = 5V, IC = 2mA

IC = 10 mA, IB = mA IC = 100 mA, IB = 5 mA

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Datasheet ID: FMB857B 514885