FJY4007R PNP Epitaxial Silicon Transistor
Part | Datasheet |
---|---|
![]() |
FJY4007R (pdf) |
PDF Datasheet Preview |
---|
FJY4007R PNP Epitaxial Silicon Transistor FJY4007R PNP Epitaxial Silicon Transistor • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJY3007R July 2007 E B SOT - 523F Equivalent Circuit Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current TSTG Storage Temperature Range Junction Temperature Collector Power Dissipation, by * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Value -50 -50 -10 -100 -55~150 200 Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient * Minimum land pad size. Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Test Condition V BR CBO Collector-Emitter Breakdown Voltage IC = -10 uA, IE = 0 V BR CEO Collector-Base Breakdown Voltage IC = -100 uA, IB = 0 ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 DC Current Gain VCE = -5 V, IC = -5mA VCE sat |
More datasheets: B82464A2222M | 1693 | L6219DSTR-T | L6219DS-T | L6219DSTR | L6219DS | M9240162 BK002 | M9240162 BK001 | M9240162 BK005 | SW5PFA-50 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJY4007R Datasheet file may be downloaded here without warranties.