FJY3015R
FJY3015R Datasheet
FJY3015R NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJY3015R |
FJY3015R (pdf) |
| PDF Datasheet Preview |
|---|
| FJY3015R NPN Epitaxial Silicon Transistor FJY3015R NPN Epitaxial Silicon Transistor • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor July 2007 E B SOT - 523F Equivalent Circuit Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current TSTG Storage Temperature Range Junction Temperature Collector Power Dissipation, by * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Value 50 10 100 -55~150 N/A Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient * Minimum land pad. Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Test Condition V BR CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 V BR CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 DC Current Gain VCE = 5 V, IC = 10 mA VCE sat |
| More datasheets: MV5753A4R0 | MV6354A | MV6353 | MV5453 | MV64530 | MV5754A | MV5753 | MV6753 | MV64531 | MV5353 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJY3015R Datasheet file may be downloaded here without warranties.