FJY3012R
FJY3012R Datasheet
FJY3012R NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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FJY3012R |
FJY3012R (pdf) |
| PDF Datasheet Preview |
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| FJY3012R NPN Epitaxial Silicon Transistor FJY3012R NPN Epitaxial Silicon Transistor • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJY4012R July 2007 E B SOT - 523F Equivalent Circuit Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current TSTG Storage Temperature Range Junction Temperature Collector Power Dissipation, by * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Value 40 5 100 -55~150 200 Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient * Minimum land pad size. Electrical Characteristics* TC = 25°C unless otherwise noted Parameter Test Condition V BR CBO Collector-Emitter Breakdown Voltage IC = 100 uA, IE = 0 V BR CEO Collector-Base Breakdown Voltage IC = 1mA, IB = 0 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 DC Current Gain VCE = 5 V, IC = 1 mA VCE sat |
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