FJX3013RTF

FJX3013RTF Datasheet

FJX3013R

Part	Datasheet
FJX3013RTF	FJX3013RTF (pdf)

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FJX3013R FJX3013R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 • Complement to FJX4013R Marking 2 1 SOT-323 Base Emitter Collector Equivalent Circuit NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.2V, IC=5mA Value 50 10 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 50 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJX3013R Package Dimensions SOT-323 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray Bottomless FACT Quiet series CoolFET

PDF Datasheet Preview

FJX3013R

FJX3013R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor R1
• Complement to FJX4013R

Marking
2 1 SOT-323 Base Emitter Collector Equivalent Circuit

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE=5V, IC=100µA VCE=0.2V, IC=5mA

Value 50 10 100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. 50

Typ.

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJX3013R

Package Dimensions

SOT-323
2002 Fairchild Semiconductor Corporation

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx

FACT

ActiveArray Bottomless

FACT Quiet series

CoolFET

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJX3013RTF Datasheet file may be downloaded here without warranties.

Datasheet ID: FJX3013RTF 514817