FJX3010RTF
FJX3010RTF Datasheet
FJX3010R
| Part | Datasheet |
|---|---|
FJX3010RTF |
FJX3010RTF (pdf) |
| PDF Datasheet Preview |
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| FJX3010R FJX3010R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJX4010R Marking 2 1 SOT-323 Base Emitter Collector Equivalent Circuit NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor Value 40 5 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 40 100 Typ. 250 10 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJX3010R Typical Characteristics hFE, DC CURRENT GAIN 10000 1000 V = 5V CE R = 10K IC[mA], COLLECTOR CURRENT Figure DC current Gain 280 240 200 160 120 80 40 Ta[oC], AMBIENT TEMPERATURE |
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