FJV4108RMTF
FJV4108RMTF Datasheet
FJV4108R
| Part | Datasheet |
|---|---|
FJV4108RMTF |
FJV4108RMTF (pdf) |
| PDF Datasheet Preview |
|---|
| FJV4108R FJV4108R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV3108R Marking PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V mA mW °C °C Min. -50 -50 56 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV4108R Typical Characteristics 1000 100 VCE = - 5V R1 = 47K R2 = 22K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 10 -1 -100 -1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain |
| More datasheets: BXRC-35E4000-F-Z3 | BXRC-40E4000-F-Z3 | BXRC-30E4000-F-Z3 | BXRC-30E4000-F-Z2 | 242290 | 368 | 2090132203 | 3153 | FQH140N10 | CUI-3934-6FT |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJV4108RMTF Datasheet file may be downloaded here without warranties.