FJV3112RMTF
FJV3112RMTF Datasheet
FJV3112R
| Part | Datasheet |
|---|---|
FJV3112RMTF |
FJV3112RMTF (pdf) |
| PDF Datasheet Preview |
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| FJV3112R FJV3112R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV4112R Marking NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor 2 1 SOT-23 Base Emitter Collector Equivalent Circuit Value 40 5 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 40 100 Typ. 250 47 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV3112R Package Dimensions SOT-23 0.97REF 0.508REF 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT |
| More datasheets: H-132C-2-120 | H-132C-2-140 | H-132C-2-160 | H-132C-2-180 | H-132C-1-160 | H-133C-2-140 | H-133C-2-160 | H-133C-2-180 | DFR0280 | 333-2UYC/H3/S530-A3 |
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