FJPF9020TU

FJPF9020TU Datasheet

FJPF9020

Part	Datasheet
FJPF9020TU	FJPF9020TU (pdf)

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FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors • High Collector-Base Breakdown Voltage BVCBO = -550V • High DC Current Gain hFE = 550 VCE = -4V, IC = -1A Typ. • Industrial Use PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature - 550 - 550 - 55 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC = - 1A, IB = - 20mA TO-220F 1.Base 2.Collector 3.Emitter Equivalent Circuit C R1 R2 Min. Typ. Max. Units - 550 - 550 -100 µA 400 550 700 2002 Fairchild Semiconductor Corporation Typical Characteristics IC [A], COLLECTOR CURRENT VCE sat [V], SATURATION VOLTAGE IB = - 40mA IB = - 15mA IB = - 3mA IB = - 1.5mA VCE [V], COLLECTOR-EMITTER VOLTAGE Figure Static Characterstic IC = - 2A IC = - 1A

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FJPF9020

FJPF9020

Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage BVCBO = -550V
• High DC Current Gain hFE = 550 VCE = -4V, IC = -1A Typ.
• Industrial Use

PNP Epitaxial Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature
- 550
- 550
- 55 ~ 150

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC = - 1A, IB = - 20mA

TO-220F
1.Base 2.Collector 3.Emitter

Equivalent Circuit C

R1 R2

Min. Typ. Max. Units
- 550
- 550
-100 µA
400 550 700
2002 Fairchild Semiconductor Corporation

Typical Characteristics

IC [A], COLLECTOR CURRENT

VCE sat [V], SATURATION VOLTAGE

IB = - 40mA

IB = - 15mA

IB = - 3mA

IB = - 1.5mA

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characterstic

IC = - 2A

IC = - 1A

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Datasheet ID: FJPF9020TU 514791