FJPF5555TU
FJPF5555TU Datasheet
FJPF5555
| Part | Datasheet |
|---|---|
FJPF5555TU |
FJPF5555TU (pdf) |
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| FJPF5555 FJPF5555 High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature TO-220F 1.Base 2.Collector 3.Emitter Value 1050 400 14 5 10 40 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Output Capacitance Turn On Time tSTG Storage Time Fall Time Turn On Time tSTG Storage Time Fall Time * Pulse test Duty IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=10mA VCE=3V, IC=0.8A IC=1A, IB=0.2A IC=3.5A, IB=1.0A IC=3.5A, IB=1.0A VCB=10V, f=1MHz VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A Min. Typ. Max. Units 1050 2004 Fairchild Semiconductor Corporation Typical Characteristics IC [A], COLLECTOR CURRENT IB = 600mA IB = 200mA |
| More datasheets: BC307BTA | BC309BTA | BC309BBU | BC309ATA | BC307BTF | BC309ABU | CY28442ZXCT | CY28442ZXC | AQD-SD4U8GN21-HG | 1969 |
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