FJPF5200RTU
FJPF5200RTU Datasheet
FJPF5200 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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FJPF5200RTU |
FJPF5200RTU (pdf) |
| Related Parts | Information |
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FJPF5200OTU |
FJPF5200OTU |
| PDF Datasheet Preview |
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| FJPF5200 NPN Epitaxial Silicon Transistor FJPF5200 NPN Epitaxial Silicon Transistor • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier • High Current Capability IC = 17A. • High Power Dissipation 50watts. • High Frequency 30MHz. • High Voltage VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to FJPF1943 • Thermal and electrical Spice models are available. • Same transistor is also available in: -- TO264 package, 2SC5200/FJL4315 150 watts -- TO3P package, 2SC5242/FJA4313 130 watts -- TO220 package, FJP5200 80 watts Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Parameter BVCBO BVCEO BVEBO IC IB PD Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Base Current Total Device Dissipation TC=25°C Derate above 25°C TJ, TSTG Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification hFE1 55 ~ 110 January 2009 TO-220F 1.Base 2.Collector 3.Emitter Ratings 5 17 50 - 50 ~ +150 Units V A W/°C °C Max. Units °C/W 80 ~ 160 2009 Fairchild Semiconductor Corporation FJPF5200 NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Ordering Information FJPF5200RTU FJPF5200OTU Marking J5200R J5200O Package TO-220F TO-220F Packing Method TUBE Remarks hFE1 R grade hFE1 O grade 2009 Fairchild Semiconductor Corporation FJPF5200 NPN Epitaxial Silicon Transistor Typical Characteristics IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN IB=200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA IB = 0 8 10 12 14 16 18 20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic Tj=125oC Tj=25oC 100 Tj=-25oC Vce=5V Ic[A], COLLECTOR CURRENT Figure DC current Gain O grade 10000 Ic=10Ib 1000 Tj=-25oC Tj=25oC Tj=125oC Ic[A], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage |
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