FJPF1943OTU
FJPF1943OTU Datasheet
FJP1943 PNP Epitaxial Silicon Transistor
| Part | Datasheet |
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FJPF1943OTU |
FJPF1943OTU (pdf) |
| Related Parts | Information |
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FJPF1943RTU |
FJPF1943RTU |
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| FJP1943 PNP Epitaxial Silicon Transistor FJP1943 PNP Epitaxial Silicon Transistor • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier • High Current Capability IC = -17A. • High Power Dissipation 80watts. • High Frequency 30MHz. • High Voltage VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to FJP5200 • Full thermal and electrical Spice models are available. • Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 150 watts -- TO3P package, 2SA1962/FJA4213 130 watts -- TO220F package, FJPF1943 50 watts Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Parameter BVCBO BVCEO BVEBO IC IB PD Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation TC=25°C Derate above 25°C TJ, TSTG Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification hFE1 55 ~ 110 January 2009 1.Base TO-220 2.Collector 3.Emitter Ratings -250 -250 -5 -17 80 - 50 ~ +150 Units V A W/°C °C Ratings Units °C/W 80 ~ 160 2009 Fairchild Semiconductor Corporation FJP1943 PNP Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage Ordering Information FJP1943RTU FJP1943OTU Marking J1943R J1943O Package TO-220 TO-220 Packing Method TUBE Remarks hFE1 R grade hFE1 O grade 2009 Fairchild Semiconductor Corporation FJP1943 PNP Epitaxial Silicon Transistor Typical Characteristics IC[mA], COLLECTOR CURRENT hFE, DC CURRENT GAIN -20 -18 IB = -1A IB = -900mA IB = -800mA IIBB==--650000mmAA IB = -700mA IB = -400mA IB = -300mA IB = -200mA IB = -100mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic Tj = 125oC Tj = 25oC 100 Tj = -25oC V = -5V CE I [A], COLLECTOR CURRENT Figure DC current Gain O Grade 10000 Ic=-10Ib 1000 Tj=-25oC Tj=25oC Tj=125oC Ic[A], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage IC[A], COLLECTOR CURRENT Vce sat [mV], SATURATION VOLTAGE |
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