FJP9100TU
FJP9100TU Datasheet
FJP9100
| Part | Datasheet |
|---|---|
FJP9100TU |
FJP9100TU (pdf) |
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| FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter • Built-in Resistor at Base RB Typ. =700 ± NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * Pulse Test PW=300µs, duty Cycle=2% Pulsed - 55 ~ 150 TO-220 1.Base 2.Collector 3.Emitter Equivalent Circuit C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCER BVCEO sus BVEBO ICBO IEBO hFE VCE sat VBE sat Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Test Condition IC = 500µA, IE = 0 IC = 1mA, RBE = IC = 1.5A, IB = 50mA, L=25mH IE = 500µA, IC = 0 VCB = 600V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 2A, IB = 5mA IC = 2A, IB = 5mA VCB = 10V, IE = 0, f=1MHz Min. 600 275 10 1000 Typ. 110 Max. 5000 Units V mA 2003 Fairchild Semiconductor Corporation |
| More datasheets: P50L-050P-A-TGF | P50L-100P-A-TGF | P50L-120P-A-TGF | P50L-050P-A-DA | EA-XPR-007 | M13086 SL005 | M13086 SL002 | M13086 SL001 | 520-04-51 | 333-2SURC/H3/S530-A4 |
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