FJP5021RVTU

FJP5021RVTU Datasheet

FJP5021

Part	Datasheet
FJP5021RVTU	FJP5021RVTU (pdf)

Related Parts	Information
FJP5021Y	FJP5021Y
FJP5021RV	FJP5021RV
FJP5021OVTU	FJP5021OVTU
FJP5021R	FJP5021R
FJP5021OV	FJP5021OV
FJP5021RTU	FJP5021RTU
FJP5021O	FJP5021O
FJP5021OTU	FJP5021OTU
FJP5021	FJP5021

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FJP5021 FJP5021 High Voltage and High Reliability • High Speed Switching tF = 0.1µs Typ. • Wide SOA TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 800 500 7 5 10 2 50 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO VCEX sus Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f=1MHz VCE = 10V, IC = 0.6A VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = Min. 800 500 7 500 Typ. 80 18 Max. Units V hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y 30 ~ 50 2003 Fairchild Semiconductor Corporation

PDF Datasheet Preview

FJP5021

FJP5021

High Voltage and High Reliability
• High Speed Switching tF = 0.1µs Typ.
• Wide SOA

TO-220
1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 800 500
7 5 10 2 50 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO VCEX sus

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage

IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped

ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF

Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A

IC = 3A, IB = 0.6A

IC = 3A, IB = 0.6A

VCB = 10V, IE = 0, f=1MHz

VCE = 10V, IC = 0.6A

VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL =

Min. 800 500
7 500

Typ.
80 18

Max.

Units V
hFE Classification

Classification hFE1

R 15 ~ 30

O 20 ~ 40

Y 30 ~ 50
2003 Fairchild Semiconductor Corporation

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Datasheet ID: FJP5021RVTU 514783