FJNS4214RBU
FJNS4214RBU Datasheet
FJNS4214R
| Part | Datasheet |
|---|---|
FJNS4214RBU |
FJNS4214RBU (pdf) |
| Related Parts | Information |
|---|---|
FJNS4214RTA |
FJNS4214RTA |
| PDF Datasheet Preview |
|---|
| FJNS4214R FJNS4214R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 • Complement to FJNS3214R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current -100 Collector Power Dissipation Junction Temperature TSTG Storage Temperature -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.2V, IC= -5mA Equivalent Circuit Min. -50 -50 68 Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS4214R |
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