FJNS4201RTA
FJNS4201RTA Datasheet
FJNS4201R
| Part | Datasheet |
|---|---|
FJNS4201RTA |
FJNS4201RTA (pdf) |
| Related Parts | Information |
|---|---|
FJNS4201RBU |
FJNS4201RBU |
| PDF Datasheet Preview |
|---|
| FJNS4201R FJNS4201R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3201R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -10mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20mA Min. -50 -50 20 Equivalent Circuit Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS4201R Typical Characteristics 1000 VCE = - 5V R1 = K R2 = K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 10 -1 -100 -1000 |
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