FJN965TA
FJN965TA Datasheet
FJN965
| Part | Datasheet |
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FJN965TA |
FJN965TA (pdf) |
| Related Parts | Information |
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FJN965BU |
FJN965BU |
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| FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 150 -55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO ICEO IEBO hFE1 hFE2 VCE sat fT Cob Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance IC=1mA, IB=0 IC=100µA, IC=0 VCB=10V, IE=0 VCE=10V, IB=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz Min. 20 7 230 150 Typ. 150 23 Max. 1 600 Units V µA µA µA 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[mA], COLLECTOR CURRENT 14 IB=200mA IB=20mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic 1000 Ta=125oC Ta=25oC Ta=-40oC V =2V CE hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure DC current Gain |
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