FJN4304RBU

FJN4304RBU Datasheet


FJN4304R

Part Datasheet
FJN4304RBU FJN4304RBU FJN4304RBU (pdf)
Related Parts Information
FJN4304RTA FJN4304RTA FJN4304RTA
PDF Datasheet Preview
FJN4304R

FJN4304R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJN3304R

TO-92

Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-100
-55 ~ 150

Equivalent Circuit

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA

Min. -50 -50 68

Typ.

Max.
-3 62

Units V µA V

MHz pF V
2002 Fairchild Semiconductor Corporation

FJN4304R

Typical Characteristics
1000

VCE = - 5V R1 = 47 K R2 = 47 K
hFE, DC CURRENT GAIN

IC [µA], COLLECTOR CURRENT
10 -1
-100
-1000
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Datasheet ID: FJN4304RBU 514739