FJN4302RBU
FJN4302RBU Datasheet
FJN4302R
| Part | Datasheet |
|---|---|
FJN4302RBU |
FJN4302RBU (pdf) |
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| FJN4302R FJN4302R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN3302R TO-92 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -10mA Min. -50 -50 30 Typ. Max. -3 13 Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJN4302R Typical Characteristics 1000 VCE = - 5V R1 = 10 K R2 = 10 K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 10 -1 -100 -1000 |
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