FJN3311RTA

FJN3311RTA Datasheet


FJN3311R

Part Datasheet
FJN3311RTA FJN3311RTA FJN3311RTA (pdf)
Related Parts Information
FJN3311RBU FJN3311RBU FJN3311RBU
PDF Datasheet Preview
FJN3311R

FJN3311R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJN4311R

TO-92

Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Min.

BVCBO

Collector-Base Breakdown Voltage

IC=100µA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage IE=1mA, IB=0

ICBO

Collector Cut-off Current

VCB=30V, IE=0

DC Current Gain

VCE=5V, IC=1mA

VCE sat Collector-Emitter Saturation Voltage IC=10mA, IB=1mA

Output Capacitance

VCB=10V, IE=0 f=1MHz

Current Gain Bandwidth Product

VCE=10V, IC=5mA

Input Resistor

Equivalent Circuit C

Typ.
250 22

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJN3311R
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Datasheet ID: FJN3311RTA 514730