FJN3305RBU
FJN3305RBU Datasheet
FJN3305R
| Part | Datasheet |
|---|---|
FJN3305RBU |
FJN3305RBU (pdf) |
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| FJN3305R FJN3305R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN4305R TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA f=1MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=20mA Min. 50 30 Typ. Max. Units V µA V pF MHz V 2002 Fairchild Semiconductor Corporation FJN3305R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = 5V R1 = 4.7K R2 = 10K IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V R = 4.7K R = 10K 2 VI off [V], INPUT OFF VOLTAGE Figure Input Off Voltage |
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