FJE3303 High Voltage Fast-Switching NPN Power Transistor
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FJE3303H2 (pdf) |
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FJE3303TU |
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FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator TO-126 Emitter 2.Collector 3.Base Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC Collector Current Pulse * Base Current DC Base Current Pulse * Collector Dissipation TC = 25°C Junction Temperature TSTG Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle 10% Value 700 400 9 3 20 150 -65 ~ 150 Units V A W °C °C 2005 Fairchild Semiconductor Corporation FJE3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics TC = 25°C unless otherwise noted BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat Parameter Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time tSTG Storge Time Fall Time |
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