FJD3076TF
FJD3076TF Datasheet
FJD3076
| Part | Datasheet |
|---|---|
FJD3076TF |
FJD3076TF (pdf) |
| PDF Datasheet Preview |
|---|
| FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage NPN Epitaxial Silicon Transistor D-PACK Base Collector Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO BVCBO BVEBO ICBO IEBO hFE VCE sat fT Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 1mA, IB = 0 IC = 50µA IE = 50µA VCB = 20V, IE = 0 VEB = 4V, IC = 0 VCE = 3V, IC= 0.5A IC = 2A, IB = 0.2A VCE = 5V, IE = -0.5A, f = 100MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz Min. 32 40 5 Typ. Max. 1 390 Units V µA µA V MHz 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT IB = 20mA IB = 18mA IB = 16mA IB = 14mA I = 12mA IB = 10mA IB = 8mA IB = 6mA IB = 4mA |
| More datasheets: MSA-0311-BLKG | HLMP-CW19-VY0DD | HLMP-CW39-SV000 | HLMP-CW39-SV0DD | HLMP-CW38-SV0DD | HLMP-CW29-TW000 | HLMP-CW29-TW0DD | HLMP-CW38-SV000 | HLMP-CW28-TW0DD | FEH |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJD3076TF Datasheet file may be downloaded here without warranties.