FJC1963STF
FJC1963STF Datasheet
FJC1963 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJC1963STF |
FJC1963STF (pdf) |
| Related Parts | Information |
|---|---|
FJC1963RTF |
FJC1963RTF |
FJC1963QTF |
FJC1963QTF |
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| FJC1963 NPN Epitaxial Silicon Transistor FJC1963 NPN Epitaxial Silicon Transistor • Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage June 2009 Marking SOT-89 Base Collector Emitter 19 PY Weekly code Year code hFE grage Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Junction Temperature Storage Temperature Value 50 30 6 3 150 - 55 to + 150 Units V A °C °C Thermal Characteristics Symbol PD Parameter Power Dissipation TA=25°C Thermal Resistance, Junction to Ambient Value 250 Units W °C/W 2009 Fairchild Semiconductor Corporation FJC1963 NPN Epitaxial Silicon Transistor Electrical Characteritics TA = 25°C unless otherwise noted Parameter Test conditions BVCBO BVCEO BVEBO ICEO IEBO hFE VCE sat VBE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCE = 40V, VB = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A IC = 1.5A, IB = 0.15A IC = 1.5A, IB = 0.15A Min. 50 30 6 Max. Units V uA hFE Classification Classification hFE Q 120 ~ 270 R 180 ~ 390 S 280 ~ 560 Package Marking and Ordering Information Device Marking 1963 Device FJC1963 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 2009 Fairchild Semiconductor Corporation FJC1963 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic IC [mA], COLLECTOR CURRENT 1400 1200 1000 800 600 400 200 IB = 7mA IB = 6mA IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA VCE [V], COLLECTOR-EMITTER VOLTAGE Figure DC Current Gain 1000 Ta = 125oC Ta = 25oC 100 Ta = - 40oC VCE = 2V hFE, DC CURRENT GAIN 100m IC [A], COLLECTOR CURRENT Figure Collector-Emitter Saturation Voltage Figure Base-Emitter Saturation Voltage 100m 10m IC = 10IB Ta = 125oC Ta = 25oC Ta = - 40oC IC = 10IB Ta = - 40oC Ta = 125oC Ta = 25oC VBE sat [V], SATURATION VOLTAGE VCE sat [V], SATURATION VOLTAGE 100m IC [A], COLLECTOR CURRENT Figure Base-Emitter On Voltage |
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