FJA3835TU
FJA3835TU Datasheet
FJA3835 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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FJA3835TU |
FJA3835TU (pdf) |
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| FJA3835 NPN Epitaxial Silicon Transistor FJA3835 NPN Epitaxial Silicon Transistor • Power Amplifier • High Current Capability IC=8A • High Power Dissipation • Wide S.O.A October 2008 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time tSTG Storage Time * Pulse Test Pulse Duty IC=5mA, IE=0 IC=10mA, IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20W Ratings 200 120 8 16 80 150 - 55 ~ 150 Units V A W °C °C Min. 200 120 Typ. |
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