FGPF7N60RUFDTU

FGPF7N60RUFDTU Datasheet

FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

Part	Datasheet
FGPF7N60RUFDTU	FGPF7N60RUFDTU (pdf)

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FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK October 2006 FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK • High speed switching • Low saturation voltage VCE sat = V IC = 7A • High input impedance • CO-PAK, IGBT with FRD trr = 50 ns typ. • Short Circuit rated, 10us TC=100°C, VGE=15V, VCE=300V Motor controls and general purpose inverters. Fairchild's Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC ICM 1 IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2006 Fairchild Semiconductor Corporation FGP7N60RUFD 600 ± 20 14 7 21 12 60 41 16 -55 to +150 -55 to +150 300 Units V A W °C °C °C Typ. ---- Max. Units °C/W °C/W °C/W FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Package Marking and Ordering Information Device Marking Device FGPF7N60RUFD FGPF7N60RUFDTU Package TO-220F Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125°C IC = 14 A, VGE = 15V Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 7A, RG = VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 7 A, RG VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 7A, VGE = 15V Measured 5mm from PKG V/°C

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FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

October 2006

FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
• High speed switching
• Low saturation voltage VCE sat = V IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD trr = 50 ns typ.
• Short Circuit rated, 10us TC=100°C, VGE=15V, VCE=300V

Motor controls and general purpose inverters.

Fairchild's Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.

TO-220F
1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC

ICM 1 IF IFM PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
2006 Fairchild Semiconductor Corporation

FGP7N60RUFD
600 ± 20 14
7 21 12 60 41 16 -55 to +150 -55 to +150 300

Units

V A W °C °C °C

Typ.
----

Max.

Units
°C/W °C/W °C/W

FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
Package Marking and Ordering Information

Device Marking

Device

FGPF7N60RUFD FGPF7N60RUFDTU

Package

TO-220F

Packaging Type

Rail / Tube

Qty per Tube
50ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

ICES

IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th VCE sat

G-E Threshold Voltage

Collector to Emitter Saturation Voltage

IC = 7mA, VCE = VGE

IC = 7A, VGE = 15V

IC = 7A, VGE = 15V, TC = 125°C

IC = 14 A, VGE = 15V

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Le

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance

VCC = 300 V, IC = 7A, RG = VGE = 15V, Inductive Load, TC = 25°C

VCC = 300 V, IC = 7 A, RG VGE = 15V, Inductive Load, TC = 125°C

VCE = 300 V, IC = 7A, VGE = 15V Measured 5mm from PKG

V/°C

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Datasheet ID: FGPF7N60RUFDTU 514649