FGPF70N33BTTU

FGPF70N33BTTU Datasheet

FGPF70N33BT 330V, 70A PDP IGBT

Part	Datasheet
FGPF70N33BTTU	FGPF70N33BTTU (pdf)

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FGPF70N33BT 330V, 70A PDP IGBT FGPF70N33BT 330V, 70A PDP IGBT • High current capability • Low saturation voltage VCE sat =1.7V IC = 70A • High input impedance • Fast switching • RoHS Compliant • PDP System November 2008 Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES ICpulse 1 * IC pulse 2 * TJ, Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation TC = 25oC TC = 25oC TC = 100oC Operating Junction Temperature and Storage Temperrature Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 2 Half Sine Wave, D< pluse width < 5usec *IC_pulse limited by max Tj Ratings 330 ± 30 160 220 48 19 -55 to +150 Typ. Max. Units V A W oC Units oC/W oC/W 2008 Fairchild Semiconductor Corporation FGPF70N33BT 330V, 70A PDP IGBT Package Marking and Ordering Information Device Marking Device FGPF70N33BT FGPF70N33BTTU Package TO-220F Packaging Type Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V V/oC ±400 On Characteristics VGE th G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V VCE sat Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, IC = 70A, VGE = 15V, TC = 25oC IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz

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FGPF70N33BT 330V, 70A PDP IGBT

FGPF70N33BT
330V, 70A PDP IGBT
• High current capability
• Low saturation voltage VCE sat =1.7V IC = 70A
• High input impedance
• Fast switching
• RoHS Compliant
• PDP System

November 2008

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

VCES VGES ICpulse 1 * IC pulse 2 *

TJ, Tstg TL

Collector to Emitter Voltage

Gate to Emitter Voltage

Pulsed Collector Current

TC = 25oC

Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation

TC = 25oC TC = 25oC TC = 100oC

Operating Junction Temperature and Storage Temperrature

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 2 Half Sine Wave, D< pluse width < 5usec *IC_pulse limited by max Tj

Ratings
330 ± 30 160 220 48 19 -55 to +150

Typ.

Max.

Units

V A W oC

Units
oC/W oC/W
2008 Fairchild Semiconductor Corporation

FGPF70N33BT 330V, 70A PDP IGBT
Package Marking and Ordering Information

Device Marking

Device

FGPF70N33BT

FGPF70N33BTTU

Package

TO-220F

Packaging Type

Tube

Qty per Tube
50ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA

ICES

IGES

Temperature Coefficient of Breakdown Voltage

Collector Cut-Off Current

G-E Leakage Current

VGE = 0V, IC = 250uA

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

V/oC
±400

On Characteristics

VGE th

G-E Threshold Voltage

IC = 250µA, VCE = VGE

IC = 20A, VGE = 15V

VCE sat

Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V,

IC = 70A, VGE = 15V, TC = 25oC

IC = 70A, VGE = 15V, TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

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Datasheet ID: FGPF70N33BTTU 514647