FGPF70N30TDTU
FGPF70N30TDTU Datasheet
FGPF70N30TD 300V, 70A PDP Trench IGBT
| Part | Datasheet |
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FGPF70N30TDTU |
FGPF70N30TDTU (pdf) |
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| FGPF70N30TD 300V, 70A PDP Trench IGBT FGPF70N30TD 300V, 70A PDP IGBT • High current capability • Low saturation voltage VCE sat =1.5V IC = 40A • High input impedance • Fast switching • RoHS complaint Application PDP System June 2007 Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-220F Absolute Maximum Ratings VCES VGES IC pulse 1 * TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation TC = 25oC TC = 25oC TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Ratings 300 ±30 160 -55 to +150 -55 to +150 300 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj Typ. ---- Max. 2006 Fairchild Semiconductor Corporation Units V A W oC Units oC/W oC/W oC/W FGPF70N30TD 300V, 70A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGPF70N30TD FGPF70N30TDTU Package TO-220F Packaging Type Tube Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =20A, VGE = 15V IC =40A, VGE = 15V IC =70A, VGE = 15V TC = 25oC IC = 70A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200V, IC = 40A RG = VGE = 15V Resistive Load, TC = 25oC VCC = 200V, IC = 40A RG = VGE = 15V Resistive Load, TC = 125oC VCE = 200V, IC = 40A VGE = 15V Qty per Tube 50ea Max Qty per Box Min. Typ. Max. Units V/oC ± 400 |
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