FGPF30N30TDTU

FGPF30N30TDTU Datasheet

FGPF30N30TD 300V, 30A PDP Trench IGBT

Part	Datasheet
FGPF30N30TDTU	FGPF30N30TDTU (pdf)

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FGPF30N30TD 300V, 30A PDP Trench IGBT FGPF30N30TD 300V, 30A PDP Trench IGBT • High current capability • Low saturation voltage VCE sat =1.4V IC = 20A • High input impedance • Fast switching • RoHS complaint • PDP System September 2007 Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC pulse 1 IF IFM TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100°C TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction to Ambient Notes 1 Repetitive tese, Pulse width = 100usec, Duty = * Ic_pluse limited by max Tj 2007 Fairchild Semiconductor Corporation Ratings 300 ± 30 80 10 40 -55 to +150 -55 to +150 Units V A W oC Typ. Max. Units oC/W oC/W oC/W FGPF30N30TD 300V, 30A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGPF30N30TD FGPF30N30TDTU Package TO-220F Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 10A, VGE = 15V IC = 20A, VGE = 15V IC = 30A, VGE = 15V, TC = 25oC IC = 30A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 200V, IC = 20A, RG = VGE = 15V, Inductive Load, TC = 25oC VCC = 200V, IC = 20A, RG = VGE = 15V, Inductive Load, TC = 125oC VCE = 200V, IC = 20A, VGE = 15V V/oC

PDF Datasheet Preview

FGPF30N30TD 300V, 30A PDP Trench IGBT

FGPF30N30TD
300V, 30A PDP Trench IGBT
• High current capability
• Low saturation voltage VCE sat =1.4V IC = 20A
• High input impedance
• Fast switching
• RoHS complaint
• PDP System

September 2007

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

TO-220F
1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC pulse 1 IF IFM

TJ Tstg

Collector to Emitter Voltage

Gate to Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 100°C

TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction to Ambient

Notes 1 Repetitive tese, Pulse width = 100usec, Duty = * Ic_pluse limited by max Tj
2007 Fairchild Semiconductor Corporation

Ratings
300 ± 30 80 10 40 -55 to +150 -55 to +150

Units

V A W oC

Typ.

Max.

Units
oC/W oC/W oC/W

FGPF30N30TD 300V, 30A PDP Trench IGBT
Package Marking and Ordering Information

Device Marking

Device

FGPF30N30TD FGPF30N30TDTU

Package

TO-220F

Packaging Type

Rail / Tube

Qty per Tube
50ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

ICES

IGES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA

Temperature Coefficient of Breakdown Voltage

VGE = 0V, IC = 250µA

Collector Cut-Off Current G-E Leakage Current

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

IC = 250µA, VCE = VGE IC = 10A, VGE = 15V IC = 20A, VGE = 15V IC = 30A, VGE = 15V, TC = 25oC IC = 30A, VGE = 15V, TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

VCC = 200V, IC = 20A, RG = VGE = 15V, Inductive Load, TC = 25oC

VCC = 200V, IC = 20A, RG = VGE = 15V, Inductive Load, TC = 125oC

VCE = 200V, IC = 20A, VGE = 15V

V/oC

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Datasheet ID: FGPF30N30TDTU 514639