FGPF120N30TU

FGPF120N30TU Datasheet

FGPF120N30 300V, 120A PDP IGBT

Part	Datasheet
FGPF120N30TU	FGPF120N30TU (pdf)

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FGPF120N30 300V, 120A PDP IGBT FGPF120N30 300V, 120A PDP IGBT • High Current Capability • Low saturation voltage VCE sat = V IC = 25A • High input impedance • Fast switching Application PDP SYSTEM January 2006 Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCES VGES IC IC_pulse 1 PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TC = 25°C TC = 25°C TC = 25°C TC = 100°C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj FGPF120N30 300 ± 20 120 180 * 60 24 -55 to +150 -55 to +150 Typ. Max. Units V A W °C °C °C Units °C/W °C/W 2006 Fairchild Semiconductor Corporation FGPF120N30 300V, 120A PDP IGBT Package Marking and Ordering Information Device Marking Device FGPF120N30 FGPF120N30TU Package TO-220F Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 250uA, VCE = VGE IC = 25A, VGE = 15V IC = 120A, VGE = 15V TC = 25°C IC = 120 A, VGE = 15V TC = 125°C VCE = 30V, VGE = 0V, f = 1MHz VCC = 200 V, IC = 25A, RG = VGE = 15V, Resistive Load, TC = 25°C VCC = 200 V, IC = 25 A, RG = VGE = 15V, Resistive Load, TC = 125°C VCE = 200 V, IC =25A, VGE = 15V Min. Typ. Max. Units V/°C -- ± 250 nA 2190 140 350 112 168 FGPF120N30 300V, 120A PDP IGBT

PDF Datasheet Preview

FGPF120N30 300V, 120A PDP IGBT

FGPF120N30
300V, 120A PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat = V IC = 25A
• High input impedance
• Fast switching

Application

PDP SYSTEM

January 2006

Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

TO-220F 1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol VCES VGES IC IC_pulse 1 PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 25°C

TC = 25°C TC = 100°C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Notes 1 Repetitive test , pulse width=100usec , Duty=0.5 * Ic_pulse limited by max Tj

FGPF120N30 300 ± 20 120 180 * 60 24
-55 to +150 -55 to +150

Typ.

Max.

Units V A W °C °C °C

Units °C/W °C/W
2006 Fairchild Semiconductor Corporation

FGPF120N30 300V, 120A PDP IGBT
Package Marking and Ordering Information

Device Marking

Device

FGPF120N30

FGPF120N30TU

Package

TO-220F

Packaging Type

Rail / Tube

Qty per Tube
50ea

Max Qty per Box

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

IC = 250uA, VCE = VGE IC = 25A, VGE = 15V IC = 120A, VGE = 15V TC = 25°C IC = 120 A, VGE = 15V TC = 125°C

VCE = 30V, VGE = 0V, f = 1MHz

VCC = 200 V, IC = 25A, RG = VGE = 15V, Resistive Load, TC = 25°C

VCC = 200 V, IC = 25 A, RG = VGE = 15V, Resistive Load, TC = 125°C

VCE = 200 V, IC =25A, VGE = 15V

Min. Typ. Max. Units

V/°C
-- ± 250 nA
2190
140 350
112 168

FGPF120N30 300V, 120A PDP IGBT

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Datasheet ID: FGPF120N30TU 514635