FGP5N60UFDTU

FGP5N60UFDTU Datasheet

FGP5N60UFD 600V, 5A Field Stop IGBT

Part	Datasheet
FGP5N60UFDTU	FGP5N60UFDTU (pdf)

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FGP5N60UFD 600V, 5A Field Stop IGBT FGP5N60UFD 600V, 5A Field Stop IGBT • High current capability • Low saturation voltage VCE sat =1.9V IC = 5A • High input impedance • Fast switching • RoHS compliant • Induction Heating, UPS, SMPS, PFS October 2008 Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS, and PFC applications where low conduction and switching losses are essential. TO-220 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. juntion temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 600 ± 20 10 5 15 81 32 -55 to +150 -55 to +150 300 Typ. Max. Units V A W oC Units oC/W oC/W oC/W 2008 Fairchild Semiconductor Corporation FGP5N60UFD 600V, 5A Field Stop IGBT Package Marking and Ordering Information Device Marking Device FGP5N60UFD FGP5N60UFDTU Package TO-220 Packaging Type Tube Qty per Tube 50ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V, TC = 25oC VCE = VCES, VGE = 0V, TC = 125oC IGES G-E Leakage Current VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 5A, VGE = 15V VCE sat Collector to Emitter Saturation Voltage IC = 5A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Input Capacitance Coes

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FGP5N60UFD 600V, 5A Field Stop IGBT

FGP5N60UFD
600V, 5A Field Stop IGBT
• High current capability
• Low saturation voltage VCE sat =1.9V IC = 5A
• High input impedance
• Fast switching
• RoHS compliant
• Induction Heating, UPS, SMPS, PFS

October 2008

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS, and PFC applications where low conduction and switching losses are essential.

TO-220
1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC

ICM 1

TJ Tstg TL

Collector to Emitter Voltage

Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 100oC

TC = 25oC TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. juntion temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Ratings
600 ± 20 10
5 15 81 32 -55 to +150 -55 to +150 300

Typ.

Max.

Units

V A W oC

Units
oC/W oC/W oC/W
2008 Fairchild Semiconductor Corporation

FGP5N60UFD 600V, 5A Field Stop IGBT
Package Marking and Ordering Information

Device Marking

Device

FGP5N60UFD

FGP5N60UFDTU

Package

TO-220

Packaging Type

Tube

Qty per Tube
50ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA

Temperature Coefficient of Breakdown Voltage

VGE = 0V, IC = 250µA

ICES

Collector Cut-Off Current

VCE = VCES, VGE = 0V, TC = 25oC

VCE = VCES, VGE = 0V,

TC = 125oC

IGES

G-E Leakage Current

VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

IC = 250µA, VCE = VGE

IC = 5A, VGE = 15V

VCE sat

Collector to Emitter Saturation Voltage IC = 5A, VGE = 15V, TC = 125oC

Dynamic Characteristics

Cies

Input Capacitance

Coes

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Datasheet ID: FGP5N60UFDTU 514633