FGL40N120AN 1200V NPT IGBT
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FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 • High speed switching • Low saturation voltage VCE sat = V IC = 40A • High input impedance Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS . TO-264 Absolute Maximum Ratings Parameter VCES VGES IC ICM 1 PD SCWT TJ TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current = 25°C = 100°C Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C Operating Junction Temperature = 25°C = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds Notes 1 Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FGL40N120AN 1200 ±25 64 40 160 500 200 -55 to +150 -55 to +150 Units °C °C Typ. Max. Units °C/W °C/W 2007 Fairchild Semiconductor Corporation FGL40N120AN 1200V NPT IGBT Package Marking and Ordering Information Device Marking Device FGL40N120AN FGL40N120AN Package TO-264 Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125°C IC = 64A, VGE = 15V Dynamic Characteristics Cies Coes cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate charge Gate-Emitter Charge Gate-Collector Charge VCC = 600V, IC = 40A, RG = VGE = 15V, Inductive Load, TC = 25°C |
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