FGH75T65UPD 650V 75A Field Stop IGBT
Part | Datasheet |
---|---|
FGH75T65UPD-F155 | FGH75T65UPD-F155 (pdf) |
PDF Datasheet Preview |
---|
FGH75T65UPD 650V 75A Field Stop IGBT August 2012 FGH75T65UPD 650V, 75A Field Stop Trench IGBT • Maximum Junction Temperature TJ = 175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage VCE sat = 1.65V Typ. IC = 75A • High input impedance • Tightened Parameter Distribution • RoHS compliant • Short Circuit Ruggedness > 5us Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator where low conduction and switching losses are essential. • Solar Inverter, UPS, Digital Power Generator COLLECTOR FLANGE Absolute Maximum Ratings Symbol VCES VGES IC ICM 1 IF IFM 1 PD SCWT TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current TC = 25oC TC = 100oC Pulsed Collector Current Diode Forward Current Diode Forward Current TC = 25oC TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time TC = 25oC TC = 100oC TC = 25oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2012 Fairchild Semiconductor Corporation Ratings 650 ± 20 150 75 225 75 50 225 375 187 5 -55 to +175 -55 to +175 Units V A W us oC Typ. Max. Units oC/W oC/W oC/W FGH75T65UPD 650V 75A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH75T65UPD Device FGH75T65UPD Package TO-247 Eco Status Pacing Type Qty per Tube 30ea For Fairchild’s definition of “green” Eco Status, please visit: Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 75mA, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 175oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Tsc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 175oC VGE = 15V, VCC < 400V, Rg = 10 V/oC |
More datasheets: 155016200810002 | 105016202010001 | 105016201010001 | 105016209010001 | 105016204010001 | 105016202610001 | 3145 | ALQ15FG48 | ALQ15GM48 | ALQ15FY48 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGH75T65UPD-F155 Datasheet file may be downloaded here without warranties.