FGH75T65UPD-F155

FGH75T65UPD-F155 Datasheet


FGH75T65UPD 650V 75A Field Stop IGBT

Part Datasheet
FGH75T65UPD-F155 FGH75T65UPD-F155 FGH75T65UPD-F155 (pdf)
PDF Datasheet Preview
FGH75T65UPD 650V 75A Field Stop IGBT

August 2012

FGH75T65UPD
650V, 75A Field Stop Trench IGBT
• Maximum Junction Temperature TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage VCE sat = 1.65V Typ. IC = 75A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Short Circuit Ruggedness > 5us

Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator where low conduction and switching losses are essential.
• Solar Inverter, UPS, Digital Power Generator

COLLECTOR FLANGE

Absolute Maximum Ratings

Symbol VCES VGES IC

ICM 1 IF

IFM 1 PD

SCWT TJ Tstg TL

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current Collector Current

TC = 25oC TC = 100oC

Pulsed Collector Current

Diode Forward Current Diode Forward Current

TC = 25oC TC = 100oC

Pulsed Diode Maximum Forward Current

Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time

TC = 25oC TC = 100oC TC = 25oC

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
2012 Fairchild Semiconductor Corporation

Ratings 650 ± 20 150 75 225 75 50 225 375 187 5
-55 to +175 -55 to +175

Units V A W us oC

Typ.

Max.

Units
oC/W oC/W oC/W

FGH75T65UPD 650V 75A Field Stop IGBT
Package Marking and Ordering Information

Device Marking

FGH75T65UPD

Device

FGH75T65UPD

Package

TO-247

Eco Status

Pacing Type

Qty per Tube
30ea

For Fairchild’s definition of “green” Eco Status, please visit:

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

ICES

IGES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA

Temperature Coefficient of Breakdown Voltage

VGE = 0V, IC = 1mA

Collector Cut-Off Current G-E Leakage Current

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 75mA, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 175oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Tsc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time

VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 25oC

VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 175oC

VGE = 15V, VCC < 400V, Rg = 10

V/oC
More datasheets: 155016200810002 | 105016202010001 | 105016201010001 | 105016209010001 | 105016204010001 | 105016202610001 | 3145 | ALQ15FG48 | ALQ15GM48 | ALQ15FY48


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGH75T65UPD-F155 Datasheet file may be downloaded here without warranties.

Datasheet ID: FGH75T65UPD-F155 514629