FGH75N60SFTU

FGH75N60SFTU Datasheet

FGH75N60SF 600V, 75A Field Stop IGBT

Part	Datasheet
FGH75N60SFTU	FGH75N60SFTU (pdf)

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FGH75N60SF 600V, 75A Field Stop IGBT FGH75N60SF 600V, 75A Field Stop IGBT • High Current Capability • Low Saturation Voltage VCE sat =2.3V IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant • Induction Heating, UPS, SMPS, PFC December 2008 Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. COLLECTOR FLANGE Absolute Maximum Ratings VCES VGES IC ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 600 ± 20 150 75 225 452 181 -55 to +150 -55 to +150 Typ. Max. Units V A W oC Units oC/W oC/W 2008 Fairchild Semiconductor Corporation FGH75N60SF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Device Marking Device FGH75N60SF FGH75N60SFTU Package TO-247 Packaging Type Tube Qty per Tube 30ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 75A, VGE = 15V V/oC

PDF Datasheet Preview

FGH75N60SF 600V, 75A Field Stop IGBT

FGH75N60SF
600V, 75A Field Stop IGBT
• High Current Capability
• Low Saturation Voltage VCE sat =2.3V IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
• Induction Heating, UPS, SMPS, PFC

December 2008

Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

COLLECTOR FLANGE

Absolute Maximum Ratings

VCES VGES IC

ICM 1

TJ Tstg TL

Collector to Emitter Voltage

Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 100oC

TC = 25oC TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Ratings
600 ± 20 150 75 225 452 181 -55 to +150 -55 to +150

Typ.

Max.

Units

V A W oC

Units
oC/W oC/W
2008 Fairchild Semiconductor Corporation

FGH75N60SF 600V, 75A Field Stop IGBT
Package Marking and Ordering Information

Device Marking

Device

FGH75N60SF

FGH75N60SFTU

Package

TO-247

Packaging Type

Tube

Qty per Tube
30ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

ICES

IGES

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA

Temperature Coefficient of Breakdown Voltage

VGE = 0V, IC = 250µA

Collector Cut-Off Current G-E Leakage Current

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 250µA, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 25oC

VCC = 400V, IC = 75A, RG = VGE = 15V, Inductive Load, TC = 125oC

VCE = 400V, IC = 75A, VGE = 15V

V/oC

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Datasheet ID: FGH75N60SFTU 514628