FGH50N6S2
FGH50N6S2 Datasheet
FGH50N6S2
| Part | Datasheet |
|---|---|
FGH50N6S2 |
FGH50N6S2 (pdf) |
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| FGH50N6S2 August 2003 FGH50N6S2 600V, SMPS II Series N-Channel IGBT The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction PFC circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49342 Features • 100kHz Operation at 390V, 40A • 200kHZ Operation at 390V, 25A • 600V Switching SOA Capability • Typical Fall Time. 90ns at TJ = 125oC • Low Gate Charge 70nC at VGE = 15V • Low Plateau Voltage .6.5V Typical • UIS Rated 480mJ • Low Conduction Loss Package TO-247 COLLECTOR Back-Metal Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage IC25 Collector Current Continuous, TC = 25°C IC110 Collector Current Continuous, TC = 110°C Collector Current Pulsed Note 1 VGES Gate to Emitter Voltage Continuous ±20 VGEM Gate to Emitter Voltage Pulsed ±30 SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 150A at 600V Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C W/°C Operating Junction Temperature Range -55 to 150 TSTG Storage Junction Temperature Range -55 to 150 CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: Pulse width limited by maximum junction temperature. Package Marking and Ordering Information Device Marking 50N6S2 Device FGH50N6S2 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 Collector to Emitter Leakage Current VCE = 600V TJ = 25°C TJ = 125°C Gate to Emitter Leakage Current VGE = ± 20V ±250 nA On State Characteristics VCE SAT Collector to Emitter Saturation Voltage VEC Diode Forward Voltage IC = 30A, VGE = 15V IEC = 30A TJ = 25°C TJ = 125°C Dynamic Characteristics QG ON Gate Charge VGE TH Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 30A, VCE = 300V VGE = 15V VGE = 20V IC = 250µA, VCE = VGE IC = 30A, VCE = 300V Switching Characteristics SSOA Switching SOA td ON I trI td OFF I tfI EON1 EON2 EOFF td ON I trI td OFF I tfI EON1 EON2 EOFF |
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