FGA90N33ATDTU

FGA90N33ATDTU Datasheet


FGA90N33ATD 330V, 90A PDP Trench IGBT

Part Datasheet
FGA90N33ATDTU FGA90N33ATDTU FGA90N33ATDTU (pdf)
PDF Datasheet Preview
FGA90N33ATD 330V, 90A PDP Trench IGBT

FGA90N33ATD
330V, 90A PDP Trench IGBT
• High current capability
• Low saturation voltage VCE sat =1.1V IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
• PDP System

August 2011

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

TO-3P

Absolute Maximum Ratings

VCES VGES IC pulse 1 IC pulse 2

TJ Tstg

Collector to Emitter Voltage

Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 25oC

TC = 25oC TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 2 Half sine wave , D<0.01, Pulse width<5usec *IC pluse limited by max Tj
2011 Fairchild Semiconductor Corporation

Ratings
330 ± 30 90 220 330 223 89 -55 to +150 -55 to +150

Typ.

Max.

Units

V A W oC

Units
oC/W oC/W oC/W

FGA90N33ATD 330V, 90A PDP Trench IGBT
Package Marking and Ordering Information

Device Marking

Device

FGA90N33ATD FGA90N33ATDTU

Package

TO-3P

Packaging Type

Tube

Qty per Tube
30ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 400uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 45A, VGE = 15V, IC = 90A, VGE = 15V, IC = 90A, VGE = 15V, TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC

VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC

VCE = 200V, IC = 20A, VGE = 15V
±400
2200

FGA90N33ATD 330V, 90A PDP Trench IGBT

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Parameter

Test Conditions

Diode Forward Voltage
More datasheets: PPSIM10MB3MO | PPSIM5MB3MO | PPSIM10MB1MO | PPSIM1MB3MO | PPSIM5MB1MO | PPSIM1MB1MO | PPSIM1MB6MO | PPSIM20MB12MO | PPSIM10MB12MO | AFBR-700SDZ


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGA90N33ATDTU Datasheet file may be downloaded here without warranties.

Datasheet ID: FGA90N33ATDTU 514616