FGA90N30TU

FGA90N30TU Datasheet

FGA90N30 300V PDP IGBT

Part	Datasheet
FGA90N30TU	FGA90N30TU (pdf)

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FGA90N30 300V PDP IGBT FGA90N30 300V PDP IGBT • High Current Capability • Low saturation voltage VCE sat , Typ = IC = 20A • High Input Impedance September 2006 Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES IC ICM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Note 1 Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 25°C TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 1 Repetitive test , pulse width = 100usec , Duty = * Ic_pulse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Ambient FGA90N30 300 ± 30 90 220 219 87 -55 to +150 -55 to +150 300 Typ. Max. Units V A W °C °C °C Units °C/W °C/W 2006 Fairchild Semiconductor Corporation FGA90N30 300V PDP IGBT Package Marking and Ordering Information Device Marking FGA90N30 Device FGA90N30 Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 90A, VGE = 15V IC = 90A, VGE = 15V, TC = 125°C VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25°C VCC =200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 20A, VGE = 15V V/°C ± 250 1700 FGA90N30 300V PDP IGBT

PDF Datasheet Preview

FGA90N30 300V PDP IGBT

FGA90N30
300V PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat , Typ = IC = 20A
• High Input Impedance

September 2006

Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.

TO-3P

Absolute Maximum Ratings TC = 25°C unless otherwise noted

VCES VGES IC ICM PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Pulsed Collector Current Note 1 Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 25°C TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
1 Repetitive test , pulse width = 100usec , Duty = * Ic_pulse limited by max Tj

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Ambient

FGA90N30
300 ± 30 90 220 219 87 -55 to +150 -55 to +150 300

Typ.

Max.

Units

V A W °C °C °C

Units
°C/W °C/W
2006 Fairchild Semiconductor Corporation

FGA90N30 300V PDP IGBT
Package Marking and Ordering Information

Device Marking

FGA90N30

Device

FGA90N30

Package

TO-3P

Reel Size

Tape Width

Quantity

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES

Collector-Emitter Breakdown Voltage

ICES IGES

Temperature Coefficient of Breakdown Voltage

Collector Cut-Off Current

G-E Leakage Current

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 90A, VGE = 15V IC = 90A, VGE = 15V, TC = 125°C

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VCC = 200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25°C

VCC =200V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 20A, VGE = 15V

V/°C
± 250
1700

FGA90N30 300V PDP IGBT

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Datasheet ID: FGA90N30TU 514614