FGA50N100BNTTU
FGA50N100BNTTU Datasheet
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
| Part | Datasheet |
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FGA50N100BNTTU |
FGA50N100BNTTU (pdf) |
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| FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 60A • High Input Impedance • RoHS Compliant • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance. TO-3P Absolute Maximum Ratings VCES VGES IC ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25oC TC = 100oC Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1000 ± 25 50 35 200 156 63 -55 to +150 -55 to +150 Typ. Max. Units V A W oC Units oC/W oC/W 2009 Fairchild Semiconductor Corporation FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information Device Marking Device FGA50N100BNT FGA50N100BNTTU Package TO-3PN Packaging Type Rail / Tube Qty per Tube 30ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = 1000V, VGE = 0V VGE = ±25V, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 10V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 60A, RG = VGE = 15V, Inductive Load, TC = 25oC VCE = 600V, IC = 60A, VGE = 15V, TC = 25oC 1000 ±500 6000 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure Typical Output Characteristics TC = 25oC 9V 120 |
| More datasheets: HMFLEX-1-4 | HMFLEX-2-1 | HMFLEX-3-1 | HMFLEX-3-3 | HMFLEX-2-3 | HMFLEX-1-3 | 2430 | SEN0237-A | AB946 | 76000793 |
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