FGA25N120FTD
FGA25N120FTD Datasheet
FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT
| Part | Datasheet |
|---|---|
FGA25N120FTD |
FGA25N120FTD (pdf) |
| PDF Datasheet Preview |
|---|
| FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 25 A • High Input Impedance • RoHS Complaint • Induction Heating, Microvewave Oven Using advanced field stop trench technology, 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. TO-3P Absolute Maximum Ratings VCES VGES IC ICM 1 IF TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25oC TC = 100oC Diode continuous Forward current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 100oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitiverating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2008 Fairchild Semiconductor Corporation Ratings 1200 ± 25 50 25 75 25 313 125 -55 to +150 -55 to +150 300 Unit V A W oC Typ. Max. Unit oC/W oC/W oC/W FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Package Marking and Ordering Information Device Marking Device FGA25N120FTD FGA25N120FTDTU Package TO-3PN Packaging Type Qty per Tube Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 25A, RG = VGE = 15V, Inductive Load, TC = 25oC VCC = 600V, IC = 25A, RG = VGE = 15V, Inductive Load, TC = 125oC VCE = 600V, IC = 25A, VGE = 15V 1200 ±250 3830 2008 Fairchild Semiconductor Corporation FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Electrical Characteristics of the Diode TC = 25°C unless otherwise noted Parameter Test Conditions |
| More datasheets: 74F106AP | 74F476AP | 74F336AP | 74F276AP | 74F226AP | 74F186AP | 74F156AP | 74F126AP | 74F566AP | 74F156AP-RC |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGA25N120FTD Datasheet file may be downloaded here without warranties.