FGA25N120AN
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FGA25N120ANTU (pdf) |
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FGA25N120AN FGA25N120AN IGBT Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor control, general purpose inverters and uninterruptible power supplies UPS . • High speed switching • Low saturation voltage VCE sat = V IC = 25A • High input impedance Induction Heating, UPS, AC & DC motor controls and general purpose inverters. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FGA25N120AN 1200 ± 20 40 25 75 310 125 -55 to +150 -55 to +150 Typ. --- Max. 40 Units V A W °C °C °C Units °C/W °C/W 2004 Fairchild Semiconductor Corporation FGA25N120AN Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 40A, VGE = 15V |
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