FGA20S120M
FGA20S120M Datasheet
FGA20S120M 1200 V, 20 A Shorted-anode IGBT
| Part | Datasheet |
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FGA20S120M |
FGA20S120M (pdf) |
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| FGA20S120M 1200 V, 20 A Shorted-anode IGBT March 2013 FGA20S120M 1200 V, 20 A Shorted-anode IGBT • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 20 A • High Input Impedance • RoHS Compliant • Induction Heating, Microwave Oven Using advanced field stop trench and shorted-anode technology, shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES IC ICM 1 Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25oC TC = 100oC Diode Continuous Forward Current TC = 25oC Diode Continuous Forward Current TC = 100oC Maximum Power Dissipation Maximum Power Dissipation TC = 25oC TC = 100oC Operating Junction Temperature Tstg Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes 1 Limited by Tjmax 2010 Fairchild Semiconductor Corporation Ratings 1200 ±25 40 20 60 40 20 348 174 -55 to +175 -55 to +175 300 Typ. ---- Max. Unit V A W oC Unit oC/W oC/W oC/W FGA20S120M 1200 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size FGA20S120M FGA20S120M TO-3PN Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 2mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage Diode Forward Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V TC = 25oC IC = 20A, VGE = 15V, TC = 125oC IC = 20A, VGE = 15V, TC = 175oC IF = 20A, TC = 25oC IF = 20A, TC = 175oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 20A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 20A, RG = VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V 1200 ±250 2680 2010 Fairchild Semiconductor Corporation FGA20S120M 1200 V, 20 A Shorted-anode IGBT Typical Performance Characteristics |
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