FGA120N30DTU

FGA120N30DTU Datasheet

FGA120N30D 300V PDP IGBT

Part	Datasheet
FGA120N30DTU	FGA120N30DTU (pdf)

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FGA120N30D 300V PDP IGBT June 2006 FGA120N30D 300V PDP IGBT • High Current Capability • Low saturation voltage VCE sat , Typ = IC = 25A • High Input Impedance Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES IC ICM IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current TC = 25°C TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 1 Repetitive test , pulse width = 100usec , Duty = * Ic_pulse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient FGA120N30D 300 ± 30 120 300 10 40 290 116 -55 to +150 -55 to +150 300 Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2006 Fairchild Semiconductor Corporation FGA120N30D 300V PDP IGBT Package Marking and Ordering Information Device Marking FGA120N30D Device FGA120N30D Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 25A, VGE = 15V IC = 120A, VGE = 15V IC = 120A, VGE = 15V, TC = 125°C Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz V/°C ± 250 2310 Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

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FGA120N30D 300V PDP IGBT

June 2006

FGA120N30D
300V PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat , Typ = IC = 25A
• High Input Impedance

Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

TO-3P

Absolute Maximum Ratings TC = 25°C unless otherwise noted

VCES VGES IC ICM IF IFM PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current

TC = 25°C TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
1 Repetitive test , pulse width = 100usec , Duty =
* Ic_pulse limited by max Tj

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

FGA120N30D
300 ± 30 120 300 10 40 290 116 -55 to +150 -55 to +150 300

Typ.
----

Max.

Units

V A W °C °C °C

Units
°C/W °C/W °C/W
2006 Fairchild Semiconductor Corporation

FGA120N30D 300V PDP IGBT
Package Marking and Ordering Information

Device Marking

FGA120N30D

Device

FGA120N30D

Package

TO-3P

Reel Size

Tape Width

Quantity

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ.

Max. Units

Off Characteristics

BVCES

Collector-Emitter Breakdown Voltage

ICES

IGES

Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current

G-E Leakage Current

VGE = 0V, IC = 250µA

VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat

Collector to Emitter Saturation Voltage

IC = 250uA, VCE = VGE

IC = 25A, VGE = 15V IC = 120A, VGE = 15V

IC = 120A, VGE = 15V, TC = 125°C

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

V/°C
± 250
2310

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc

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Datasheet ID: FGA120N30DTU 514595