FFPF04S60STU

FFPF04S60STU Datasheet


FFPF04S60S 4 A, 600 V, STEALTH II Diode

Part Datasheet
FFPF04S60STU FFPF04S60STU FFPF04S60STU (pdf)
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FFPF04S60S 4 A, 600 V, STEALTH II Diode

FFPF04S60S
• General Purpose
• Switching Mode Power Supply
• Boost Diode in Continuous Mode Power Factor Corrections
• Power Switching Circuits

October 2007
4 A, 600 V, STEALTH II Diode

The FFPF04S60S is a STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

TO-220F-2L Cathode Anode

Cathode Anode

Absolute Maximum Ratings TC = 25oC unless otherwise noted

Parameter

VRRM VRWM VR IF AV

IFSM

TC = 116oC

TJ, TSTG

Operating and Storage Temperature Range

Thermal Characteristics

Parameter Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information

Device Marking

F04S60S

Device

FFPF04S60STU

Package

TO-220F-2L

Reel Size

Rating

Unit
-65 to +150

Rating

Unit oC/W

Tape Width

Quantity
2007 Fairchild Semiconductor Corporation

FFPF04S60S 4 A, 600 V, STEALTH II Diode

Electrical Characteristics TC = 25oC unless otherwise noted

Parameter

IF = 4 A IF = 4 A

VR = 600 V VR = 600 V

IF = 1 A, di/dt = 100 A/µs, VR = 30 V
trr Irr S factor

IF = 4 A, di/dt = 200 A/µs, VR = 390 V
trr Irr S factor

IF = 4 A, di/dt = 200 A/µs, VR = 390 V

WAVL

Avalanche Energy L = 40 mH

Notes 1 Pulse Test Pulse width = 300µs, Duty Cycle = 2%

TC = 25oC TC = 125oC
25oC 125oC

TC = 25oC

TC = 25oC

TC = 125oC

Test Circuit and Waveforms

Min.

Typ.

Max.

Unit
100 500
2007 Fairchild Semiconductor Corporation
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Datasheet ID: FFPF04S60STU 514538