FFPF04S60S 4 A, 600 V, STEALTH II Diode
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FFPF04S60STU (pdf) |
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FFPF04S60S 4 A, 600 V, STEALTH II Diode FFPF04S60S • General Purpose • Switching Mode Power Supply • Boost Diode in Continuous Mode Power Factor Corrections • Power Switching Circuits October 2007 4 A, 600 V, STEALTH II Diode The FFPF04S60S is a STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. TO-220F-2L Cathode Anode Cathode Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Parameter VRRM VRWM VR IF AV IFSM TC = 116oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case Package Marking and Ordering Information Device Marking F04S60S Device FFPF04S60STU Package TO-220F-2L Reel Size Rating Unit -65 to +150 Rating Unit oC/W Tape Width Quantity 2007 Fairchild Semiconductor Corporation FFPF04S60S 4 A, 600 V, STEALTH II Diode Electrical Characteristics TC = 25oC unless otherwise noted Parameter IF = 4 A IF = 4 A VR = 600 V VR = 600 V IF = 1 A, di/dt = 100 A/µs, VR = 30 V trr Irr S factor IF = 4 A, di/dt = 200 A/µs, VR = 390 V trr Irr S factor IF = 4 A, di/dt = 200 A/µs, VR = 390 V WAVL Avalanche Energy L = 40 mH Notes 1 Pulse Test Pulse width = 300µs, Duty Cycle = 2% TC = 25oC TC = 125oC 25oC 125oC TC = 25oC TC = 25oC TC = 125oC Test Circuit and Waveforms Min. Typ. Max. Unit 100 500 2007 Fairchild Semiconductor Corporation |
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